Two Articles of Interest من دكتورة سامية احمد سليمان استاذة الهندسة بجامعة Pennsylvania State

Quote: | Samia A. Suliman Assistant Professor of Engineering Science and Mechanics schedule email [email protected] office 407B EESB (814) 863 - 3574 web site interests (keywords) Nano/Micro Electronics Devices and Materials: Physics and Technology Publications Books Consultings Memberships Awards Services Activities Principal Publications of Last Five Years (partial list) < 1 > S. A. Suliman et al., The effects of channel boron-doping on the performance and reliability of N-channel trench UMOSFETs, Solid State Electronics, 45, 655-661 (2001). < 2 > S.A. Suliman et al., The dependance of UMOSFETs characteristics and reliability on geometry and processing, Semiconductor Science and Technology, 16, 447-454 (2001). < 3 > S. A. Suliman et al., The impact of trench geometry and processing on performance and reliability of low voltage power UMOSFETs, Proc. of the 39th annual International Reliability Physics Symposium, Orlando, FL, Apr. 30-May 3, 308-314 (2001). < 4 > G. M. Dolny, N. Gollagunta, S. A. Suliman, ..., Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETs using charge pumping technique, Proc. of the 13th International Symposium for Power Semiconductor Devices and ICs, (ISPSD), Osaka, Japan, June 4-7, 431-434 (2001). < 5 > C. T. Wu, R. Ridley, G. Dolny, T. Grebs, J. Hao, S. A. Suliman, ..., Processing of thick thermal gate oxides in trenches, Proc. of the 6th International Sumposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, K. B. Sundaram, et al., Editors 199th Electrochemical Society Meeting, Washington, DC, April (2001). < 6 > C.-T Wu, R. Ridley, G. Dolny,T. Greb, C. Knoedler, S. Suliman,..., Growth and reliability of thick gate oxide in a trench, International Symposium on Power Semiconductor Devices, ISPSD (2002). < 7 > S. A. Suliman et al., Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench, Solid State Electronics, 46, 837-845 (2002). < 8 > Samia A. Suliman, Electrical studies on U-shaped trench-gated metal-oxide-silicon structures, Ph.D. Thesis May 2002 < 9 > S. A. Suliman et al, Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitor: The impact of polycrystalline Si doping and oxide composition , Solid State Electronics, 47, 899-905, (2003). < 10 > S. A. Suliman et al., Gate oxide grown in the sidewalls and base of a U-shaped Si trench : effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices”, Microelectronic Engineering, in press (2003).